Datasheet Specifications
- Part number
- TIM1314-8UL
- Manufacturer
- Toshiba ↗
- File Size
- 477.50 KB
- Datasheet
- TIM1314-8UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1314-8UL RF PERFORMANCE SPECITIM1314-8UL Distributors
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