Datasheet Specifications
- Part number
- TIM1314-30L
- Manufacturer
- Toshiba ↗
- File Size
- 292.97 KB
- Datasheet
- TIM1314-30L-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM1314-30L .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 5.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min. ) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTETIM1314-30L Distributors
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