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HN2S03FU Silicon Epitaxial Schottky Barrier Type Diode

HN2S03FU Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 inde.

HN2S03FU Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Datasheet Details

Part number
HN2S03FU
Manufacturer
Toshiba ↗
File Size
204.51 KB
Datasheet
HN2S03FU-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba HN2S03FU-like datasheet