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HN20N03 N-Channel Enhancement Mode Power MOSFET

HN20N03 Description

HN20N03 N-Channel Enhancement Mode Power MOSFET .
The HN20N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HN20N03 Features

* VDS = 30V,ID = 20A
* High density cell design for ultra low RDS(on)
* Excellent package for good heat dissipation SOT-89 Maximum Ratings (Tc = 25℃ unless otherwise noted
* ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Tc=100℃ Pulsed Drai

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Datasheet Details

Part number
HN20N03
Manufacturer
ETC
File Size
532.63 KB
Datasheet
HN20N03-ETC.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET ETC
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