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HN2S01FU Silicon Epitaxial Schottky Barrier Type Diode

HN2S01FU Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Low Voltage High Speed Switching Application HN2S01FU Unit: mm z HN2S01FU is composed.

HN2S01FU Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Datasheet Details

Part number
HN2S01FU
Manufacturer
Toshiba ↗
File Size
201.76 KB
Datasheet
HN2S01FU-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba HN2S01FU-like datasheet