Datasheet Specifications
- Part number
- HN2S02JE
- Manufacturer
- Toshiba ↗
- File Size
- 192.42 KB
- Datasheet
- HN2S02JE-Toshiba.pdf
- Description
- Silicon Epitaxial Schottky Barrier Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent .
Applications
* z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ. ) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V MaximumHN2S02JE Distributors
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