Datasheet4U Logo Datasheet4U.com

HN2S02JE Silicon Epitaxial Schottky Barrier Type Diode

HN2S02JE Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent .

HN2S02JE Applications

* z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ. ) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum

📥 Download Datasheet

Preview of HN2S02JE PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HN2S02JE
Manufacturer
Toshiba ↗
File Size
192.42 KB
Datasheet
HN2S02JE-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

📁 Related Datasheet

  • HN2029CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2063CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2064CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2066CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2067CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN2074CG - (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)
  • HN20N03 - N-Channel Enhancement Mode Power MOSFET (ETC)
  • HN27128AG - 16K x 8-Bit UV EPROM (Hitachi)

📌 All Tags

Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba HN2S02JE-like datasheet