HN1C03FU Silicon NPN Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) HN1C03FU For Muting and Switching Applications HN1C03FU Unit: mm z Including two devices.

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Datasheet Specifications

Part number: HN1C03FU
Manufacturer: Toshiba ↗
File Size: 287.13 KB
Datasheet: HN1C03FU-Toshiba.pdf
Description: Silicon NPN Epitaxial Type Transistor

Applications

* HN1C03FU Unit: mm z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ. )(VCE =
* 2V, IC =
* 4mA) z Low on resistance: RON = 1Ω (typ. )(IB = 5mA) Absolute Maximum Ratings (Ta = 25°C)

HN1C03FU Distributors

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HN1C03FU Silicon NPN Epitaxial Type Transistor Toshiba

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