HN1C03F Silicon NPN Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications z Including two devices in SM6 (Super mini t.

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Datasheet Specifications

Part number: HN1C03F
Manufacturer: Toshiba ↗
File Size: 368.05 KB
Datasheet: HN1C03F-Toshiba.pdf
Description: Silicon NPN Epitaxial Type Transistor

Applications

* z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ. )(VCE =
* 2V, IC =
* 4mA) z Low on resistance: RON = 1Ω (typ. )(IB = 5mA) HN1C03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2

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HN1C03F Silicon NPN Epitaxial Type Transistor Toshiba

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