HN1C01F Silicon NPN Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) HN1C01F HN1C01F Audio Frequency General Purpose Amplifier Applications * Small packa.

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Datasheet Specifications

Part number: HN1C01F
Manufacturer: Toshiba ↗
File Size: 471.40 KB
Datasheet: HN1C01F-Toshiba.pdf
Description: Silicon NPN Epitaxial Type Transistor

Applications

* Small package (dual type)
* High voltage and high current : VCEO = 50 V, IC = 150 mA (max)
* High hFE : hFE = 120 to 400
* Excellent hFE linearity : hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ. ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Sy

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HN1C01F Silicon NPN Epitaxial Type Transistor Toshiba

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