Datasheet4U Logo Datasheet4U.com

1SS423 - Silicon Epitaxial Schottky Barrier Type Diode

1SS423 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications * Small package * Low forward voltage: VF.

1SS423 Applications

* Small package
* Low forward voltage: VF (3) = 0.56 V (typ. )
* Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Av

📥 Download Datasheet

Preview of 1SS423 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
1SS423
Manufacturer
Toshiba ↗
File Size
334.53 KB
Datasheet
1SS423-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

📁 Related Datasheet

  • 1SS422 - High speed Switching Diode (GME)
  • 1SS400 - SURFACE MOUNT FAST SWITCHING DIODE (LITE-ON)
  • 1SS400-G - Surface Mount High Speed Switching Diode (Comchip Technology)
  • 1SS400C2 - High Speed Switching diode (Cystech Electonics)
  • 1SS400CS - High Speed Switching Diode (JCET)
  • 1SS400CST5 - SWITCHING Diodes (WILLAS)
  • 1SS400FH - Switching Diode (Rohm)
  • 1SS400G - SMD Small Signal Switching Diode (Formosa MS)

📌 All Tags

Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba 1SS423-like datasheet