1SS423 Datasheet - Toshiba

1SS423, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications * Small package * Low forward voltage: VF.

Applications

* Small package
* Low forward voltage: VF (3) = 0.56 V (typ. )
* Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Av

1SS423-Toshiba.pdf