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1SS424 - Silicon Diode

1SS424 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications z Low forward voltage : VF (3) = 0.50 V (typ.) 1SS42.

1SS424 Applications

* z Low forward voltage : VF (3) = 0.50 V (typ. ) 1SS424 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms)

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Silicon Diode Toshiba
Toshiba 1SS424-like datasheet