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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
z Low forward voltage
: VF (3) = 0.50 V (typ.)
1SS424
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
30 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 300 mA
Average forward current Surge current (10 ms) Power dissipation
IO IFSM P*
200 mA 1A
150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr −40 to 100 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS424 Datasheet
