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1SS420CT - Silicon Diode

1SS420CT Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications * Low reverse current: IR = 5 μA (max) 0.6±.

1SS420CT Applications

* Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.38 +0.02 -0.03 0.5±0.03 0.05±0.03 Reverse v

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Silicon Diode Toshiba
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