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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS421
1SS421
High-Speed Switching Application
Unit: mm
Low forward voltage: VF (3) = 0.50V (max)
Abusolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VR IFM IO IFSM P*
30
V
300
mA
200
mA
1
A
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
*:
Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
Cu pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g.
1SS421 Datasheet
