1SS421 Datasheet - Toshiba

1SS421, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF (3) = 0.50V .

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS421-Toshiba.pdf