TC58DVG02A1FT00 Datasheet (Toshiba Semiconductor) - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC58DVG02A1FT00, MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks.

The device has a 528-byte static register which allows program and read data to be transferred between the register

TC58DVG02A1FT00 Features

* x Organization Memory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.