Description
The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks.
Features
- x Organization Memory cell allay 528 u 128K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ).
TC58DVM92A1FT0_Toshiba.pdf
