Description
The device is a single 3.3 V 512Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.
Features
- Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control.
- Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA.
TC58DVM92A1FT00_Toshiba.pdf
