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SSM6P39TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P39TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
0.65 0.65 2.0±0.1
Unit: mm
2.1±0.1 1.7±0.1
• • •
1.8 V drive P-ch 2-in-1 Low ON-resistance:
2 3
5 4
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) (Note)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.5 -3 500 150 −55 to 150 Unit V V A mW °C °C
0.7±0.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
UF6
JEDEC JEITA TOSHIBA
― ― 2-2T1B
Weight: 7.0mg (typ.)
Note: Using continuously under heavy loads (e.g.
SSM6P39TU Datasheet
