SSM6K406TU Datasheet - Toshiba Semiconductor

SSM6K406TU, Silicon N-Channel MOSFET

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching

Applications

* 4.5-V drive
* Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V) Ron = 25.0 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain
* source voltage VDSS 30 V Gate
* source voltage VGSS ±20 V Drain current D

SSM6K406TU-ToshibaSemiconductor.pdf