SSM6K403TU - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM6K403TU
Manufacturer	Toshiba ↗ Semiconductor
File Size	428.70 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM6K403TU-ToshibaSemiconductor.pdf

(1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 66 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 43 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 32 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit UF6 SSM6K403TU 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2008-01 2022-02-02 Rev.1.0 SSM6K403TU 4. Absolute Maximum Ratings (Note) (Unless otherwise speci.

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Published: Sep 18, 2014 |