SSM6K06FU Datasheet (Toshiba Semiconductor) - High Speed Switching Applications

SSM6K06FU, High Speed Switching Applications

www.DataSheet4U.com SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 1.1 2.2 300 150 -55~150 Unit V V A Drain powe