SSM6K517NU - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.8-V drive (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6B SSM6K517NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-04 2020-06-02 Rev.3.0 SSM6K517NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit D.

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Published: Dec 15, 2023 |