SSM6J26FE Datasheet - Toshiba Semiconductor

SSM6J26FE, Silicon P-Channel MOSFET

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching

Applications

* Unit: mm 0.2±0.05
* Optimum for high-density mounting in small packages
* Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) Absolute Maximum Ratings (Ta = 25°C) 1.6±0.05 1.2±0.05 1 6 2 5 1.6±0.05 1.0±0.05 0

SSM6J26FE_ToshibaSemiconductor.pdf