Datasheet4U Logo Datasheet4U.com

SSM6J801R - Silicon P-Channel MOSFET

Features

  • (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.3.0 SSM6J801R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteri.

📥 Download Datasheet

Datasheet Details

Part number SSM6J801R
Manufacturer Toshiba
File Size 289.24 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J801R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSM6J06FU Power Management Switch Toshiba Semiconductor
SSM6J07FU Power Management Switch Toshiba Semiconductor
SSM6J08FU Silicon P-Channel MOSFET Toshiba Semiconductor
SSM6J205FE High-Speed Switching Applications Toshiba Semiconductor
SSM6J206FE High-Speed Switching Applications Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
SSM6J808R Silicon P-Channel MOSFET
SSM6J825R Silicon P-Channel MOSFET
SSM6J422TU Silicon P-Channel MOSFET
SSM6J424TU Silicon P-Channel MOSFET
SSM6J501NU P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J801R 1. Applications • Power Management Switches 2. Features (1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.3.0 SSM6J801R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS -8/+6 Drain current (DC) Drain current (pulsed) (Note 1) (Note 1), (Note 2) ID IDP -6.0 -24.
Published: |