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SSM6J214FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J214FE
○ Power Management Switch Applications
• 1.8 V drive • Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature Storage temperature range
Symbol
Rating
Unit
VDSS
-30
V
VGSS
± 12
V
ID (Note 1)
-3.6
A
IDP (Note 1)
-7.2
PD (Note 2)
500
mW
t = 10s
700
Tch
150
°C
Tstg
−55 to 150
°C
ES6
1,2,5,6 ： Drain
3
： Gate
4
： Source
JEDEC
―
Note: Using continuously under heavy loads (e.g.
SSM6J214FE Datasheet
