SSM6J214FE Datasheet (Toshiba Semiconductor)

SSM6J214FE, Silicon P-Channel MOSFET

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel