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MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J507NU
1. Applications
• Power Management Switches
2. Features
(1) 4 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J507NU
1.2.5.6 Drain 3. Gate 4. Source
©2015 Toshiba Corporation
1
Start of commercial production
2015-05
2015-11-10 Rev.2.0
SSM6J507NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -30 V
Gate-source voltage
VGSS
-25 / +20
Drain current (DC)
(Note 1)
ID
-10 A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
-30
Power dissipation
(Note 3)
PD
1.
SSM6J507NU Datasheet
