SSM3K56MFV Datasheet - Toshiba Semiconductor

SSM3K56MFV, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS SSM3K56MFV 1.

Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration VESM SSM3K56MFV 1. Gate 2. Source 3. Drain S

SSM3K56MFV-ToshibaSemiconductor.pdf