SSM3K02T Datasheet (Toshiba Semiconductor) - High Speed Switching Applications

SSM3K02T, High Speed Switching Applications

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) w w w .

D a t a S h e e t 4 U .

c o m Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP P