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SSM3K01F Datasheet - Toshiba Semiconductor

SSM3K01F Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F SSM3K01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6 to 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±10 V Drain current DC Pulse ID.

SSM3K01F Datasheet (329.07 KB)

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Datasheet Details

Part number:

SSM3K01F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

329.07 KB

Description:

Silicon n-channel mosfet.

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SSM3K01F Silicon N-Channel MOSFET Toshiba Semiconductor

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