SSM3K02F Datasheet (Toshiba Semiconductor) - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02F, TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGS