Datasheet4U Logo Datasheet4U.com

SSM3K02F Datasheet - Toshiba Semiconductor

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGS.

SSM3K02F Datasheet (157.00 KB)

Preview of SSM3K02F PDF
SSM3K02F Datasheet Preview Page 2 SSM3K02F Datasheet Preview Page 3

Datasheet Details

Part number:

SSM3K02F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

157.00 KB

Description:

Toshiba field effect transistor silicon n channel mos type.

📁 Related Datasheet

SSM3K02T High Speed Switching Applications (Toshiba Semiconductor)

SSM3K01F Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K01T Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K03FE Silicon N-Channel MOS Type FET (Toshiba Semiconductor)

SSM3K03FV High Speed Switching Applications (Toshiba Semiconductor)

SSM3K03TE High Speed Switching Applications (Toshiba Semiconductor)

SSM3K04FE High Speed Switching Applications (Toshiba Semiconductor)

SSM3K04FS Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM3K02F TOSHIBA Field Effect Transistor Silicon Channel MOS Type Toshiba Semiconductor

SSM3K02F Distributor