SSM3K35MFV Datasheet - Toshiba Semiconductor

SSM3K35MFV, Silicon N-Channel MOSFET

SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV ○ High-Speed Switching

Applications

* ○ Analog Switch Applications
* 1.2 V drive
* Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2

SSM3K35MFV_ToshibaSemiconductor.pdf