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SSM3K303T Datasheet - Toshiba Semiconductor

SSM3K303T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3K303T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.64 KB

Description:

Silicon n-channel mosfet.

SSM3K303T, Silicon N-Channel MOSFET

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications 4 V drive Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.9 A 5.8 Drain power dissipation PD (Note 1) 700 mW Channel

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