SSM3K302T Datasheet (Toshiba Semiconductor) - Power Management Switch Applications

SSM3K302T, Power Management Switch Applications

SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8V) Ron = Ron = 87mΩ (max) (@VGS = 2.5V) 71 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute www.DataSheet4U.com Maximum Ratings (Ta = 25°C) Characteristic Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ± 12 3.0 6.0 700 150 55~150 Unit V V