SSM3K35CT Datasheet - Toshiba Semiconductor

SSM3K35CT, Silicon N-Channel MOSFET

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT ○ High-Speed Switching

Applications

* ○ Analog Switch Applications Unit: mm
* 1.2-V drive
* Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit

SSM3K35CT-ToshibaSemiconductor.pdf