SSM3K09FU Datasheet - Toshiba Semiconductor

SSM3K09FU, Silicon N-Channel MOSFET

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching

Applications

* Unit: mm
* Small package
* Low on resistance : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID

SSM3K09FU_ToshibaSemiconductor.pdf