SSM3J15TE Datasheet - Toshiba Semiconductor

SSM3J15TE, Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J15TE www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching

Applications

* Analog Switch Applications Unit: mm
* Small package Low ON resistance : Ron = 12 Ω (max) (@VGS =
* 4 V) : Ron = 32 Ω (max) (@VGS =
* 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS

SSM3J15TE_ToshibaSemiconductor.pdf