1SS378 Datasheet - Toshiba Semiconductor

1SS378, Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching 1SS378 Unit: mm z Low forward voltage z Small package : VF.

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS378_ToshibaSemiconductor.pdf