1SS377 Datasheet - Toshiba Semiconductor

1SS377, Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23.

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS377_ToshibaSemiconductor.pdf