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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS377
High Speed Switching
1SS377
Unit: mm
z Low forward voltage z Small package
: VF = 0.23V (typ.) @IF = 5mA : SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms) Power dissipation
IFSM P
1* A 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS377 Datasheet
