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1SS372 Datasheet - Toshiba Semiconductor

1SS372, Silicon Epitaxial Schottky Barrie Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small package z Low forward voltage:.
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* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS372_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS372

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

211.22 KB

Description:

Silicon Epitaxial Schottky Barrie Diode

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