TDG650E60 Datasheet (Teledyne) - Bottom- or Top-side Cooled 650V E-mode GaN FET

TDG650E60, Bottom- or Top-side Cooled 650V E-mode GaN FET

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology.

The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency.

GaN Systems implements patented Island Technology® cell layout for high

TDG650E60 Features

* 650 V enhancement mode power switch with P-GaN gate structure

* Bottom- or Top-side cooled configuration

* RDS(on) = 25 mΩ (typ)

* IDS(max) = 60 A

* Ultra-low FOM Island Technology® die

* Ultra-low inductance GaNPX® package

* Easy gate drive