TSM1NB60S 600V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM1NB60S 600V N-Channel Power MOSFET TO-92 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) .
The TSM1NB60S N-Channel Power MOSFET is produced by new advance planar process.

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Datasheet Specifications

Part number: TSM1NB60S
Manufacturer: Taiwan Semiconductor
File Size: 135.09 KB
Datasheet: TSM1NB60S-TaiwanSemiconductor.pdf
Description: 600V N-Channel Power MOSFET

Features

* Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60SCT B0 TSM1NB60SCT B0G TSM1NB60SCT A3 Package TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo N-Channel

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A12

TSM1NB60S Distributors

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TSM1NB60S 600V N-Channel Power MOSFET Taiwan Semiconductor

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