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TSM1NB60CP N-Channel Power MOSFET

TSM1NB60CP Description

TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω .

TSM1NB60CP Features

* Low RDS(ON) 9.4Ω (Typ. )
* Low gate charge typical @ 7.7nC (Typ. )
* Low Crss typical @ 8pF (Typ. )
* RoHS Compliant

TSM1NB60CP Applications

* Power Supply
* Lighting
* Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC =

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Datasheet Details

Part number
TSM1NB60CP
Manufacturer
Taiwan Semiconductor
File Size
364.12 KB
Datasheet
TSM1NB60CP-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM1NB60CP-like datasheet