TSM1NB60 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 600 RDS(.
The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process.

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Datasheet Specifications

Part number: TSM1NB60
Manufacturer: Taiwan Semiconductor
File Size: 413.66 KB
Datasheet: TSM1NB60-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) 8Ω (Typ. ) Low gate charge typical @ 6.1nC (Typ. ) Low Crss typical @ 4.2pF (Typ. ) Block Diagram Ordering Information Part No. TSM1NB60CH C5G TSM1NB60CP ROG Package TO-251 TO-252 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET TSM1NB60CW R

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: A12

TSM1NB60 Distributors

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TSM1NB60 N-Channel Power MOSFET Taiwan Semiconductor

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