TSM1N60 N-Channel Power Enhancement Mode MOSFET

Taiwan Semiconductor

Description

www.DataSheet4U.com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1.Gate 2.Drain 3.Source VDS = 600V ID = 1A RDS (on), Vgs @ 10.
The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: TSM1N60
Manufacturer: Taiwan Semiconductor
File Size: 205.94 KB
Datasheet: TSM1N60_TaiwanSemiconductor.pdf
Description: N-Channel Power Enhancement Mode MOSFET

Features

* Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No.

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TSM1N60 N-Channel Power Enhancement Mode MOSFET Taiwan Semiconductor

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