Datasheet4U.com

TSM1N60S 600V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Preview Page 1

Description

TO-92 Pin Definition: 1.Gate 2.Drain 3.Source TSM1N60S 600V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 11 @ VGS =10V ID (.
The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

📥 Download Datasheet

TSM1N60S Datasheet Preview — Preview of TSM1N60S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Specifications

Part number: TSM1N60S
Manufacturer: Taiwan Semiconductor
File Size: 365.45 KB
Datasheet: TSM1N60S_TaiwanSemiconductor.pdf
Description: 600V N-Channel Power MOSFET

Features

* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain d

TSM1N60S Distributors

📁 Related Datasheet

TSM1N45 TSM1N45D TSM100 TSM100-33 TSM100I TSM101

📌 All Tags

TSM1N60S 600V N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM1N60S-like datasheet