TSM19N20 200V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V .
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Datasheet Specifications

Part number: TSM19N20
Manufacturer: Taiwan Semiconductor
File Size: 88.62 KB
Datasheet: TSM19N20-TaiwanSemiconductor.pdf
Description: 200V N-Channel Power MOSFET

Features

* Advanced Trench Technology Low RDS(ON) 92mΩ (Max. ) Low gate charge typical @ 55nC (Typ. ) Low Crss typical @ 73pF (Typ. ) Block Diagram Ordering Information Part No. TSM19N20CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

TSM19N20 Distributors

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TSM19N20 200V N-Channel Power MOSFET Taiwan Semiconductor

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