TSM10N80 800V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.05 @ VGS =10V.
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

📥 Download Datasheet

TSM10N80 Datasheet Preview — Preview of TSM10N80 PDF

Datasheet Specifications

Part number: TSM10N80
Manufacturer: Taiwan Semiconductor
File Size: 497.95 KB
Datasheet: TSM10N80-TaiwanSemiconductor.pdf
Description: 800V N-Channel Power MOSFET

Features

* Low RDS(ON) 1.05Ω (Max. ) Low gate charge typical @ 53nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless ot

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B13

TSM10N80 Distributors

📁 Related Datasheet

TSM10N60 TSM100 TSM100-33 TSM100I TSM101 TSM1011

📌 All Tags

TSM10N80 800V N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM10N80-like datasheet