TSM10N80CI, TSM10N80 800V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.05 @ VGS =10V.
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

📥 Download Datasheet

TSM10N80CI Datasheet Preview — This datasheet PDF includes multiple part numbers: TSM10N80CI, TSM10N80. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TSM10N80CI, TSM10N80
Manufacturer: Taiwan Semiconductor
File Size: 497.95 KB
Datasheet: TSM10N80-TaiwanSemiconductor.pdf
Description: 800V N-Channel Power MOSFET
Note: This datasheet PDF includes multiple part numbers: TSM10N80CI, TSM10N80.
Please refer to the document for exact specifications by model.

Features

* Low RDS(ON) 1.05Ω (Max. ) Low gate charge typical @ 53nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless ot

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B13

TSM10N80CI Distributors

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TSM10N80 800V N-Channel Power MOSFET Taiwan Semiconductor

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