TSM100N06 60V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TO-220 Pin Definition: 1.Gate 2.Drain 3.Source TSM100N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 6.7 @ VGS =10V ID.

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Datasheet Specifications

Part number: TSM100N06
Manufacturer: Taiwan Semiconductor
File Size: 608.48 KB
Datasheet: TSM100N06-TaiwanSemiconductor.pdf
Description: 60V N-Channel Power MOSFET

Features

* Advanced Trench Technology
* Low RDS(ON) 6.7mΩ (Max. )
* Low gate charge typical @ 81nC (Typ. )
* Low Crss typical @ 339pF (Typ. ) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channe

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TSM100N06 60V N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM100N06-like datasheet