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T4312816A - 8M x 16 SDRAM

Description

The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle .

Features

  • 3.3V power supply.
  • Four banks operation.
  • LVTTL compatible with multiplexed address.
  • All inputs are sampled at the positive going edge of system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto refresh and self refresh.
  • 64ms refresh period (4K cycle).
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave).

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Datasheet preview – T4312816A

Datasheet Details

Part number T4312816A
Manufacturer Taiwan Memory Technology
File Size 706.31 KB
Description 8M x 16 SDRAM
Datasheet download datasheet T4312816A Datasheet
Additional preview pages of the T4312816A datasheet.

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    Full PDF Text Transcription

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    tm TE CH SDRAM Preliminary T4312816A 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 64ms refresh period (4K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type in 54 pin TSOP(II) • Operating temperature : 0 ~ +70 °C ORDERING INFORMATION PART NO. T4312816A-6S MAX TEMPERATURE FREQUENCY 166 MHz 0 ~ +70°C T4312816A-7S 143 MHz 0 ~ +70°C T4312816A-7.
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