Datasheet Details
| Part number | T431616E |
|---|---|
| Manufacturer | TMT |
| File Size | 759.46 KB |
| Description | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| Datasheet |
 T431616E Datasheet
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General Description
The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.
It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).
Key Features
- Fast access time: 5/6/7 ns.
- Fast clock rate: 200/166/143 MHz.
- Self refresh mode: standard and low power.
- Internal pipelined architecture.
- 512K word x 16-bit x 2-bank.
- Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
- Individual byte controlled by LDQM and UDQM.
- Auto Refresh and Self Refresh.
- 4096 refresh cycles/64ms.